Solid-phase epitaxial growth of Si through palladium silicide layers
- 1 July 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (7) , 2831-2836
- https://doi.org/10.1063/1.322026
Abstract
Epitaxial growth of 4000‐ to 9000‐Å‐thick Si layers has been obtained by solid‐phase transport through Pd silicide layers. The structures were formed by evaporating Si on Pd deposited on 〈100〉 Si substrates. The transport and growth of Si were stuided by SEM and MeV 4He+ backscattering and channeling effect measurements. The structures were initially heated to 280 °C to form Pd2Si and subsequently heated to temperatures between 500 and 600 °C to obtain transport of Si. At 500 °C the transport rate of Si through the silicide layer is about 15 Å/min. Pd inclusions are found in the grown Si layer. The amount of Pd can be reduced by use of slow hearing between 280 °C and the transport temperature. Channeling measurements showed that the Si layers are well ordered and epitaxial with the underlying 〈100〉 substrate.This publication has 13 references indexed in Scilit:
- Solid-phase transport and epitaxial growth of Ge and SiApplied Physics Letters, 1974
- Crystallization of Ge and Si in metal films. IIJournal of Applied Physics, 1974
- Crystallization of Ge and Si in metal films. IJournal of Applied Physics, 1974
- Analysis of thin-film structures with nuclear backscattering and x-ray diffractionJournal of Vacuum Science and Technology, 1974
- Characterization of polycrystalline layers by channelling measurementsThin Solid Films, 1973
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973
- Solid-phase epitaxial growth of Si mesas from al metallizationApplied Physics Letters, 1973
- Solid-phase epitaxial growth of Ge layersPhysica Status Solidi (a), 1972
- Formation of silicon oxide over gold layers on silicon substratesJournal of Applied Physics, 1972
- Metal contact induced crystallization in films of amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1972