Transient capacitance spectroscopy in heavily compensated semiconductors
- 31 May 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (5) , 485-492
- https://doi.org/10.1016/0038-1101(85)90112-1
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- An easy method to determine carrier-capture cross sections: Application to GaAsJournal of Applied Physics, 1984
- Determination of trapped charge emission rates from nonexponential capacitance transients due to high trap densities in semiconductorsJournal of Applied Physics, 1984
- Electric-Field-Induced Phonon-Assisted Tunnel Ionization from Deep Levels in SemiconductorsPhysical Review Letters, 1982
- Note on the Analysis of DLTS and C2-DLTSJapanese Journal of Applied Physics, 1982
- A Modulated DLTS Method for Large Signal Analysis (C2-DLTS)Japanese Journal of Applied Physics, 1981
- Energy dependence of deep level introduction in electron irradiated GaAsJournal of Applied Physics, 1980
- Constant-capacitance DLTS measurement of defect-density profiles in semiconductorsJournal of Applied Physics, 1979
- Phonon assisted tunnel emission of electrons from deep levels in GaAsJournal de Physique, 1979
- Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance techniqueSolid-State Electronics, 1974
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974