130 GHz GaAs monolithic integrated circuit sampling head
- 7 August 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (6) , 592-594
- https://doi.org/10.1063/1.101842
Abstract
We have fabricated a GaAs diode sampling head which has a bandwidth of 130 GHz, which is a five times improvement over previous room-temperature designs. This speed is attained with a monolithic sampling head design integrated with two nonlinear transmission lines which serve as the strobe pulse and test signal generators. A 4 ps transition time has been measured with the sampler. We have also measured sinusoidal waveforms to 120 GHz.Keywords
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