Boron penetration studies from p+ polycrystalline Si through HfSixOy
- 5 August 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (6) , 1074-1076
- https://doi.org/10.1063/1.1498872
Abstract
We present detailed B penetration studies from B-doped polysilicon through alternate gate dielectric candidate HfSi x O y films. No detectible B penetration is observed for annealing times as long as 20 s after 950 ° C . Considerable B incorporation into the Si substrate is observed for annealing temperatures higher than 950 ° C . By modeling the B depth profiles, we calculated the B diffusivities through HfSi x O y to be higher than the corresponding diffusivities for SiO 2 . B diffusion through grain boundaries after HfSi x O y crystallization is proposed to be responsible for the enhanced B diffusivity observed.Keywords
This publication has 15 references indexed in Scilit:
- Hafnium interdiffusion studies from hafnium silicate into siliconApplied Physics Letters, 2001
- Boron penetration in p+ polycrystalline-Si/Al2O3/Si metal–oxide–semiconductor systemApplied Physics Letters, 2000
- Boron Diffusion in Silicon Oxides and OxynitridesJournal of the Electrochemical Society, 1998
- Effect of film density on boron diffusion in SiO2Applied Physics Letters, 1998
- Physical Models of Boron Diffusion in Ultrathin Gate OxidesJournal of the Electrochemical Society, 1997
- Thickness dependence of boron penetration through O/sub 2/- and N/sub 2/O-grown gate oxides and its impact on threshold voltage variationIEEE Transactions on Electron Devices, 1996
- Nitrogen redistribution in SiO2 under ion bombardmentJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Anomalous diffusion of nitrogen in SiO2 under ion bombardmentApplied Physics Letters, 1993
- Boron contamination of surfaces in silicon microelectronics processing: Characterization and causesJournal of Vacuum Science & Technology A, 1991
- Diffusion of phosphorus in silicon oxide filmJournal of Physics and Chemistry of Solids, 1959