Time-resolved infrared radiometry of laser-heated silicon
- 1 May 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 25 (5) , 1112-1117
- https://doi.org/10.1109/3.28007
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Remote monitoring of thermal conductivity of a powder by a flash radiometry techniqueJournal of Applied Physics, 1988
- Pulsed photothermal radiometry for depth profiling of layered mediaApplied Physics Letters, 1987
- A model for pulsed laser melting of graphiteJournal of Applied Physics, 1985
- Pulsed photothermal radiometry for noncontact spectroscopy, material testing and inspection measurementsInfrared Physics, 1985
- Kinetics of plasmas and melting induced in silicon and germanium by nanosecond laser pulsesPhysical Review B, 1984
- Techniques of flash radiometryJournal of Applied Physics, 1984
- Infrared reflectivity probing of thermal and spatial properties of laser-generated carriers in germaniumPhysical Review B, 1982
- Optical heating in semiconductors: Laser damage in Ge, Si, InSb, and GaAsJournal of Applied Physics, 1980
- Optical heating in semiconductorsPhysical Review B, 1980
- Observation of carrier densities in silicon devices by infrared emissionJournal of Physics E: Scientific Instruments, 1977