Supercritical drying for nanostructure fabrication without pattern collapse
- 1 May 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 46 (1-4) , 129-132
- https://doi.org/10.1016/s0167-9317(99)00033-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Fabrication of sub-10-nm silicon lines with minimum fluctuationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Dimensional limitations of silicon nanolines resulting from pattern distortion due to surface tension of rinse waterApplied Physics Letters, 1995
- Mechanism of Resist Pattern CollapseJournal of the Electrochemical Society, 1993