Carrier-phonon interactions in 1.3-μm quaternary In0.72Ga0.28As0.6 P0.4
- 1 December 1982
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (12) , 9224-9226
- https://doi.org/10.1063/1.330397
Abstract
Optically induced hot carriers in In0.72Ga0.28As0.6 P0.4 are measured using photoluminescence techniques and interpreted in terms of a polar‐optical‐phonon‐scattering model with four phonons. We show that the combined effect of these phonons can be well represented using a single effective phonon energy for a wide temperature range, e.g., ℏωeff =31.6 meV for carrier temperatures between 35 and 160 K. This observation should greatly simplify the inclusion of multiphonon scattering in future calculations for this quaternary alloy material.This publication has 5 references indexed in Scilit:
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