Ultrafast carrier trapping and slow recombination in ion-bombarded silicon on sapphire measured via THz spectroscopy
- 2 May 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (18) , 2385-2387
- https://doi.org/10.1063/1.111622
Abstract
We have performed two different types of femtosecond pump and probe measurements on THz transmitting antennas fabricated on ion-bombarded silicon-on-sapphire chips. We find evidence that the decay of the photoexcited current occurs on a time scale of less than 1 ps. Simultaneously, we observe unambiguous evidence of screening originating from carriers trapped in long-lived trap states. A simple model of carrier transport and screening in the presence of fast trapping and slow recombination is discussed.Keywords
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