Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers
- 31 December 1998
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 80 (1-4) , 275-279
- https://doi.org/10.1016/s0022-2313(98)00111-2
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layersApplied Physics Letters, 1997
- Electroluminescence and photoluminescence of Ge+-implanted SiO2 films thermally grown on crystalline siliconApplied Physics Letters, 1997
- Blue and violet photoluminescence from high-dose Si+- and Ge+-implanted silicon dioxide layersMicroelectronic Engineering, 1997
- Room-temperature, short-wavelength (400–500 nm) photoluminescence from silicon-implanted silicon dioxide filmsApplied Physics Letters, 1996
- Visible electroluminescence from Si+-implanted SiO2 films thermally grown on crystalline SiSolid State Communications, 1996
- Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline siliconApplied Physics Letters, 1996
- Violet Luminescence from Ge+-Implanted SiO2 Film on Si SubstrateMRS Proceedings, 1996
- Electroluminescence Device Perspectives of Si+-Implanted SiO2MRS Proceedings, 1996
- Electroluminescence and photoluminescence of Ge-implanted Si/SiO2/Si structuresApplied Physics Letters, 1995
- Visible photoluminescence in Si+-implanted silica glassJournal of Applied Physics, 1994