On the nitrogen vacancy in GaN
- 27 October 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (17) , 3525-3527
- https://doi.org/10.1063/1.1623009
Abstract
The dominant electrically active defect produced by 0.42 MeV electron irradiation in GaN is a 70 meV donor. Since only N-sublattice displacements can be produced at this energy, and since theory predicts that the N interstitial is a deep acceptor in n-type GaN, we argue that the 70 meV donor is most likely the isolated N vacancy. The background shallow donors, in the 24–26 meV range, actually decrease in concentration, probably due to interactions with mobile N interstitials that are produced by the irradiation. Thus, the recent assignment of a photoluminescence (PL) line as an exciton bound to a 25 meV N-vacancy donor is incompatible with our results. Moreover, we do not observe that PL line in our sample.Keywords
This publication has 17 references indexed in Scilit:
- Molecular dynamics study of defect formation in GaN cascadesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002
- Donors in hydride-vapor-phase epitaxial GaNJournal of Crystal Growth, 2002
- Ga vacancies in electron irradiated GaN: introduction, stability and temperature dependence of positron trappingPhysica B: Condensed Matter, 2001
- Free-Standing GaN Substrates by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 2000
- Detection of Interstitial Ga in GaNPhysical Review Letters, 2000
- Defect Donor and Acceptor in GaNPhysical Review Letters, 1997
- Optical detection of magnetic resonance in electron-irradiated GaNPhysical Review B, 1997
- Shallow donors in GaN—The binding energy and the electron effective massSolid State Communications, 1995
- Positron-annihilation studies of neutral and negatively charged As vacancies in GaAsPhysical Review B, 1994
- Irradiation-induced defects in GaAsJournal of Physics C: Solid State Physics, 1985