Donors in hydride-vapor-phase epitaxial GaN
- 1 December 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 246 (3-4) , 307-314
- https://doi.org/10.1016/s0022-0248(02)01755-4
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Identification of Si and O donors in hydride-vapor-phase epitaxial GaNApplied Physics Letters, 2001
- High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layersPhysica B: Condensed Matter, 1999
- Optical characterization of lateral epitaxial overgrown GaN layersApplied Physics Letters, 1998
- Theory of doping and defects in III–V nitridesJournal of Crystal Growth, 1998
- Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mWJapanese Journal of Applied Physics, 1998
- Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxyApplied Physics Letters, 1997
- N vacancies in AlxGa1−xNJournal of Applied Physics, 1992
- Thermal Annealing Effects on P-Type Mg-Doped GaN FilmsJapanese Journal of Applied Physics, 1992
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substratesApplied Physics Letters, 1983