N vacancies in AlxGa1−xN

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Abstract
Predictions of deep levels associated with N vacancies in AlxGa1−xN as functions of alloy composition x explain both (i) the dramatic change from naturally n‐type to semi‐insulating behavior (for x=xc≂0.5) in terms of a shallow‐deep transition for the vacancy’s T2 level, and (ii) the major photoluminescence feature in terms of recombination from the vacancy’s A1 deep level. Extrinisic photoluminescence data for Zn‐doped AlxGa1−xN are interpreted in terms of a transition from the conduction band to a T2‐symmetric deep level in the lower part of the gap. This level is associated with antisite Zn on a N site, ZnN.