Properties of aluminium oxide films prepared by plasma-enhanced metal-organic chemical vapour deposition
- 1 August 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 189 (1) , 161-173
- https://doi.org/10.1016/0040-6090(90)90036-d
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Surface conduction mechanisms and the electrical properties of Al2O3 humidity sensorApplied Surface Science, 1987
- Characterization of Al2O3 films deposited by various methodsThin Solid Films, 1986
- Al2O3 films for integrated opticsThin Solid Films, 1986
- Electrical properties of Al2O3 and AlPxOy dielectric layers on InPThin Solid Films, 1984
- Effect of pyrolytic Al2O3 deposition temperature on inversion-mode InP metal-insulator-semiconductor field–effect transistorJournal of Applied Physics, 1981
- Properties of Al2 O 3 Films Deposited from the AlCl3, CO 2, and H 2 SystemJournal of the Electrochemical Society, 1978
- Sodium migration through electron-gun evaporated Al2O3 and double layer Al2O3SiO2 structuresSolid-State Electronics, 1970
- Radiation resistance of Al2O3MOS devicesIEEE Transactions on Electron Devices, 1969
- Preliminary investigations of Reactively Evaporated Aluminum Oxide Films on SiliconJournal of the Electrochemical Society, 1969
- Deposition and Properties of Aluminum Oxide Obtained by Pyrolytic Decomposition of an Aluminum AlkoxideJournal of the Electrochemical Society, 1967