Liquid Phase Epitaxial Growth of InAs1-x-yPxSby on InAs Substrate

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Abstract
InAsPSb quaternary alloy, lattice-matched to InAs substrate, is promising material for 3–4 µm wavelength optical sources. This quaternary alloy was grown on (001) InAs substrate by liquid phase epitaxy. The lattice constant for this epitaxial layer, grown by the equilibrium cooling method, increases along the growth direction, because P content in this quaternary decreases and Sb content increases along the growth direction. The InAs-InP-InSb pseudoternary phase diagram was also calculated. From these results, it was shown that in order to obtain a quaternary solid with higher P and Sb concentration under lattice-matching to InAs substrate condition, lower growth temperature is required.