Hole-Electron Production in Semiconductors

This publication has 13 references indexed in Scilit:

• Temperature dependence of hot electron drift velocity in silicon at high electric field
  Solid-State Electronics, 1968
• Accurate determination of the ionization energy in semiconductor detectors
  Nuclear Instruments and Methods, 1968
• Resonance Broadening of Absorption Lines
  Physical Review B, 1967
• Theory of the Yield and Fano Factor of Electron-Hole Pairs Generated in Semiconductors by High-Energy Particles
  Physical Review B, 1965
• Ionization Rates of Holes and Electrons in Silicon
  Physical Review B, 1964
• Charge multiplication in silicon p-n junctions
  Solid-State Electronics, 1963
• Problems related to p-n junctions in silicon
  Solid-State Electronics, 1961
• Threshold Energy for Electron-Hole Pair-Production by Electrons in Silicon
  Physical Review B, 1957
• Scattering of Electrons by Lattice Vibrations in Nonpolar Crystals
  Physical Review B, 1956
• Ionization Yield of Radiations. II. The Fluctuations of the Number of Ions
  Physical Review B, 1947