A study of the power handling ability of gallium arsenide and silicon, single and double drift IMPATT diodes
- 1 February 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (2) , 137-153
- https://doi.org/10.1016/0038-1101(74)90062-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A comparison of silicon and gallium arsenide large signal IMPATT diode behaviour between 10 and 100 GHzSolid-State Electronics, 1973
- High-frequency fall-off of Impatt diode efficiencySolid-State Electronics, 1972
- Power-impedance-frequency limitations of IMPATT oscillators calculated from a scaling approximationIEEE Transactions on Electron Devices, 1971
- Microwave avalanche diodesProceedings of the IEEE, 1971
- Double-drift-region ion-implanted millimeter-wave IMPATT diodesProceedings of the IEEE, 1971
- Properties of Gallium Arsenide Diodes between 4.2° and 300°KJournal of Applied Physics, 1965