A doped highly compensated crystal semiconductor as a model of amorphous semiconductors
- 16 April 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 16 (2) , 515-526
- https://doi.org/10.1002/pssa.2210160221
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Optical and electrical energy gaps in amorphous semiconductorsJournal of Non-Crystalline Solids, 1971
- Quantitative study of the effect of compensation on impurity conduction in heavily doped n-type germaniumJournal of Non-Crystalline Solids, 1970
- Optical properties of amorphous chalcogenide alloy filmsJournal of Non-Crystalline Solids, 1970
- A review of band structure and transport mechanisms in elemental amorphous semiconductorsJournal of Non-Crystalline Solids, 1970
- Interband optical transitions in disordered semiconductorsPhysica Status Solidi (b), 1970
- Conduction in non-crystalline materialsPhilosophical Magazine, 1969
- The Influence of Local Potential Fluctuations on the Low‐Temperature Radiative Recombination of Compensated GermaniumPhysica Status Solidi (b), 1969
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- Double Layer Capacities of Single Crystals of Gold in Perchloric Acid SolutionsJournal of the Electrochemical Society, 1962
- P-N-P-N Transistor SwitchesProceedings of the IRE, 1956