Elemental boron doping behavior in silicon molecular beam epitaxy
- 4 February 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (5) , 481-483
- https://doi.org/10.1063/1.104614
Abstract
Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C. Precipitation and surface segregation effects were observed at doping levels of 2×1020 cm−3 for growth temperatures above 600 °C. At growth temperatures below 600 °C, excellent profile control was achieved with complete electrical activation at concentrations of 2×1020 cm−3, corresponding to the optimal MBE growth conditions for a range of Si/SixGe1−x heterostructures.Keywords
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