The characterisation of GaAs NiAuGe ohmic contacts alloyed with an SiO2 overlayer for use in an ion implanted MESFET technology
- 1 March 1985
- journal article
- Published by Elsevier in Physica B+C
- Vol. 129 (1-3) , 445-449
- https://doi.org/10.1016/0378-4363(85)90620-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- New explanation of N
D
−1 dependence of specific contact resistance for n -GaAsElectronics Letters, 1982
- Obtaining the specific contact resistance from transmission line model measurementsIEEE Electron Device Letters, 1982
- Characteristics of AuGeNi ohmic contacts to GaAsSolid-State Electronics, 1982
- Alloyed ohmic contacts to GaAsJournal of Vacuum Science and Technology, 1981
- Improved ohmic properties of Au–Ge Contacts to thin n -GaAs layers alloyed with an SiO 2 overlayerElectronics Letters, 1979
- Contact Resistance and Contact ResistivityJournal of the Electrochemical Society, 1972