Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates
- 15 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 97-102
- https://doi.org/10.1016/s0022-0248(98)00180-8
Abstract
No abstract availableKeywords
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