Passivation and performance analysis of thin film Peltier heat pumps
- 1 January 1999
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 17 (1) , 306-309
- https://doi.org/10.1116/1.582031
Abstract
SiO 2 passivation of thin film Au–Bi2Te3 based Peltier devices was investigated. SiO2 deposited by plasma enhanced chemical vapor deposition at 350 °C was found to adversely affect the Au–Bi2Te3 devices, while SiO2 thin films deposited in a reactive asymmetric bipolar pulsed dc sputtering process passivated the Au–Bi2Te3 devices with minimal change in device resistivity. Replacing the chrome adhesion film with a Mo–W film to adhere the gold metal to SiO2 was found to further optimize the performance of the thin film Peltier device. Thermal modeling showed that two-arm Au–Bi2Te3 based Peltier devices are realistically capable of a maximum temperature differential of approximately 18 °C, with a thermal response time close to 2 ms/°C.This publication has 8 references indexed in Scilit:
- Optimization of Bi2Te3 thin films for microintegrated Peltier heat pumpsJournal of Vacuum Science & Technology A, 1997
- A micro-integrated Peltier heat pump for localized on-chip temperature controlCanadian Journal of Physics, 1996
- A Microstructure For Measurement Of Thermal Conductivity Of Polysilicon Thin FilmsJournal of Microelectromechanical Systems, 1992
- Thermoelectric cooling effect in a p-Sb2Te3−n-Bi2Te3 thin film thermocoupleSolid-State Electronics, 1992
- Thermoelectric infrared sensors by CMOS technologyIEEE Electron Device Letters, 1992
- Miniaturized thermoelectric radiation sensors covering a wide range with respect to sensitivity or time constantSensors and Actuators A: Physical, 1991
- Narrow-bandgap semiconductor-based thermal sensorsSensors and Actuators A: Physical, 1991
- High sensitivity and detectivity radiation thermopiles made by multi-layer technologySensors and Actuators A: Physical, 1990