Thermoelectric infrared sensors by CMOS technology
- 1 September 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (9) , 454-456
- https://doi.org/10.1109/55.192792
Abstract
The authors report two integrated thermoelectric infrared sensors on thin silicon oxide/nitride microstructures realized by industrial CMOS IC technology, followed by one compatible single maskless anisotropic etching step. No additional material is needed to enhance infrared absorption since the passivation layer, as provided by the CMOS process, is sufficient for certain spectral bands. The responsivities are between 12 and 28 V/W.Keywords
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