Analysis of an Anomalous Subthreshold Current in a Fully Recessed Oxide MOSFET Using a Three-Dimensional Device Simulator
- 1 February 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 20 (1) , 361-365
- https://doi.org/10.1109/jssc.1985.1052315
Abstract
This paper describes a three-dimensional device simulator, TOPMOST, and its use in the analysis of the anomalous subthreshold current "hump" in a fully recessed oxide MOS structure. TOPMOST solves Poisson's and current continuity equations using the finite-difference method and the box-integration technique, which has been extended to suit an arbitrary three-dimensional stucture. The device simulator can be optionally coupled with a two-dimensional process simulator for investigating the influence of process conditions on device performances. Using TOPMOST, the subthreshold current characteristics of a fully recessed oxide structure are examined. The mechanism underlying the hump is clarified, and the dependence on structure parameters, such as channel width, gate oxide thickness, and gate extension, are studied. It is shown that there is a worst case where the current hump becomes most conspicuous. It is also shown that the hump can be suppressed by a side-wall implantation.Keywords
This publication has 11 references indexed in Scilit:
- A simplified box (buried-oxide) isolation technology for megabit dynamic memoriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- Device modelingProceedings of the IEEE, 1983
- Three-dimensional simulation of inverse narrow-channel effectElectronics Letters, 1982
- Modification of ICCG method for application to semiconductor device simulatorsElectronics Letters, 1982
- A new bird's-beak free field isolation technology for VLSI devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- Nonplanar VLSI device analysis using the solution of Poisson's equationIEEE Transactions on Electron Devices, 1980
- VLSI limitations from drain-induced barrier loweringIEEE Transactions on Electron Devices, 1979
- Analytical models of threshold voltage and breakdown voltage of short-channel MOSFET's derived from two-dimensional analysisIEEE Transactions on Electron Devices, 1979
- An Iterative Solution Method for Linear Systems of Which the Coefficient Matrix is a Symmetric M-MatrixMathematics of Computation, 1977
- A self-consistent iterative scheme for one-dimensional steady state transistor calculationsIEEE Transactions on Electron Devices, 1964