The effect of low-energy Ga ions on GaAs/AlGaAs heterostructures

This publication has 13 references indexed in Scilit:

• Electronic transport through very short and narrow channels constricted in GaAs by highly resistive Ga-implanted regions
  Physical Review B, 1989
• Narrow conducting channels defined by helium ion beam damage
  Applied Physics Letters, 1988
• Threshold transport of high-mobility two-dimensional electron gas in GaAs/AlGaAs heterostructures
  Applied Physics Letters, 1988
• Fabrication of one-dimensional GaAs wires by focused ion beam implantation
  Journal of Vacuum Science & Technology B, 1988
• Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties
  Physical Review B, 1988
• Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs-GaxAl1−xAs interfaces
  Applied Physics Letters, 1986
• Lateral GaAs Photodetector Fabricated by Ga Focused-Jon-Beam Implantation
  Japanese Journal of Applied Physics, 1986
• Mobility of the two-dimensional electron gas at selectively doped n -type ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As/GaAs heterojunctions with controlled electron concentrations
  Physical Review B, 1986
• Observation of strong localization effects in (AlGa)As–GaAs two-dimensional electron gas structures at low magnetic fields
  Journal of Vacuum Science & Technology B, 1986
• Electrical Properties of Ga Ion Beam Implanted GaAs Epilayer
  Japanese Journal of Applied Physics, 1985