Lateral GaAs Photodetector Fabricated by Ga Focused-Jon-Beam Implantation
- 1 July 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (7A) , L560
- https://doi.org/10.1143/jjap.25.l560
Abstract
A photodetector with lateral GaAs n+-π-n+ structure is studied. This structure is fabricated by Ga ion implantation into n+-GaAs epilayer on a semi-insulating GaAs substrate using focused-ion-beam (FIB) technology. This photodetector behaves as a phototransistor in low-bias region and avalanche multiplication appears beyond a breakdown voltage. Multiplication gain of more than 50 and impulse response of less than 200 ps were obtained. These characteristics make this device suitable for application in monolithic optoelectronic circuits.Keywords
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