High speed, ion bombarded InGaAs photoconductors
- 15 February 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (4) , 396-398
- https://doi.org/10.1063/1.95590
Abstract
Studies of the performance of n-InGaAs photoconductive detectors before and after the introduction of recombination sites via ion bombardment are described. An empirical relation between speed of response and bombardment dose by Be ions is established for this material, demonstrating that the response time can be controllably reduced by more than two orders of magnitude below the few nanosecond time which is characteristic of undamaged devices. In this same radiation dose range only moderate mobility deterioration is observed. Greater than unity photoconductive gain is demonstrated for large size (15 μm) devices with a 1/e response time of 400 ps.Keywords
This publication has 5 references indexed in Scilit:
- High-sensitivity Ga0.47In0.53As photoconductive detectors prepared by vapor phase epitaxyApplied Physics Letters, 1984
- High-speed Ga 0.47 In 0.53 as photoconductive detector for picosecond light pulsesElectronics Letters, 1981
- Generation of optical pulses shorter than 0.1 psec by colliding pulse mode lockingApplied Physics Letters, 1981
- High-speed photoconductive detectors using GaInAsIEEE Journal of Quantum Electronics, 1981
- Picosecond photoconductivity in radiation-damaged silicon-on-sapphire filmsApplied Physics Letters, 1981