High-sensitivity Ga0.47In0.53As photoconductive detectors prepared by vapor phase epitaxy
- 15 June 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (12) , 1142-1144
- https://doi.org/10.1063/1.94670
Abstract
We report a Ga0.47In0.53As photoconductive detector with a receiver sensitivity better than that of a Ga0.47In0.53As pin photodiode. This is the first time that a 1.3‐μm, 1‐Gbit/s receiver sensitivity for a photoconductive detector as high as −34.4 dBm was achieved at a bit error rate of 10−9. This result represents a 2.9‐dB improvement over the Ga0.47In0.53As pin photodiode used in our measurements. Furthermore, this detector can operate with bias voltage less than 2 V, representing a circuit simplicity over certain detectors. Our study concludes that photoconductive detectors are attractive devices for high data‐rate lightwave communication applications.Keywords
This publication has 10 references indexed in Scilit:
- Interdigitated Al0.48In0.52As/Ga0.47In0.53As photoconductive detectorsApplied Physics Letters, 1984
- New minority hole sinked photoconductive detectorApplied Physics Letters, 1983
- 1 Gbit/s transmission experiment over 101 km of single-mode fibre using a 1.55 μm ridge guide C 3 laserElectronics Letters, 1983
- 1.5 GHz operation of an Al
x
Ga
1−
x
As/GaAs modulation-doped photoconductive detectorElectronics Letters, 1983
- Modulation-doped Ga0.47In0.53As/Al0.48In0.52As planar photoconductive detectors for 1.0–1.55-μm applicationsApplied Physics Letters, 1983
- High-speed Ga 0.47 In 0.53 as photoconductive detector for picosecond light pulsesElectronics Letters, 1981
- Frequency and pulse response of a novel high-speed interdigital surface photoconductor (IDPC)IEEE Electron Device Letters, 1981
- High-speed photoconductive detectors using GaInAsIEEE Journal of Quantum Electronics, 1981
- High-speed InP optoelectronic switchApplied Physics Letters, 1979
- Picosecond optoelectronic switching in GaAsApplied Physics Letters, 1977