Formation of High Resistance Region in GaAs by Ga Focused-Ion-Beam Implantation
- 1 December 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (12A) , L903-904
- https://doi.org/10.1143/jjap.24.l903
Abstract
It was experimentally confirmed for the first time that Ga focused-ion-beam maskless implantation into n-GaAs is effective to form a submicron high resistance region, even though 850°C annealing was made after Ga implantation. For conductive layers formed by 30 keV, 5×1012 cm-2 Si implantation, a critical Ga ion dose for obtaining the high resistance region was found to be about 3×1013 cm-2. Estimated resistivity in the high resistance region was around 1×104 Ω·cm with breakdown voltage of about 30 V. Residual radiation damage seems to be one of the main factors in the formation of the high resistance region.Keywords
This publication has 4 references indexed in Scilit:
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