Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs
- 1 January 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (1A) , L6-8
- https://doi.org/10.1143/jjap.24.l6
Abstract
Depth distribution of implanted Si into GaAs using a focused-ion-beam (0.2 µm diameter, 160 keV) was profiled by means of differential Hall effect measurement and secondary ion mass spectroscopy. As compared to conventional unfocused-ion-beam implantation, implantation with a focused ion beam of high current density at high doses results in broadened profiles of the implanted Si at greater depths. This is probably caused by radiation-enhanced migration of the implanted Si during implantation.Keywords
This publication has 9 references indexed in Scilit:
- Reduced Damage Generation in GaAs Implanted with Focused Be IonsJapanese Journal of Applied Physics, 1984
- Focused Si Ion Implantation in GaAsJapanese Journal of Applied Physics, 1983
- Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation SystemJapanese Journal of Applied Physics, 1983
- Dependence of implanted Se and S profiles on GaAs implantation temperature and crystallinityApplied Physics Letters, 1981
- Ion channeling in GaAs: Si, S, Se, and TeApplied Physics Letters, 1980
- High current density Ga+ implantations into SiApplied Physics Letters, 1979
- Fast diffusion of elevated-temperature ion-implanted Se in GaAs as measured by secondary ion mass spectrometryApplied Physics Letters, 1978
- A double-layered encapsulant for annealing ion-implanted GaAs up to 1100 °CApplied Physics Letters, 1977
- Axial and planar effects in the energy loss of protons in silicon single crystalsPhysics Letters, 1965