A double-layered encapsulant for annealing ion-implanted GaAs up to 1100 °C
- 1 August 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (3) , 158-161
- https://doi.org/10.1063/1.89623
Abstract
A double‐layered encapsulation consisting of a 1000‐Å plasma‐deposited Si3N4 layer under a 3000‐Å CVD SiO2 layer doped with arsenic has been used to anneal selenium ion‐implanted GaAs at temperatures up to 1100 °C with no signs of mechanical failure when examined with a scanning electron microscope. Significant improvement in electrical activation of implanted layers over simple Si3N4 layer caps has also been observed at lower temperatures.Keywords
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