Reduced Damage Generation in GaAs Implanted with Focused Be Ions
- 1 July 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (7A) , L515-517
- https://doi.org/10.1143/jjap.23.l515
Abstract
Induced damage in focused-Be-ion-implanted GaAs was measured using Raman scattering spectroscopy. The amount of damage has been found to be reduced in the GaAs implanted with a Be ion beam focused to about 0.2 µm at 160 keV in comparison with the conventional unfocused case. Depth distribution profiles of the focused-ion-implant damage have shown that a considerable reduction of the damage occurs particularly at the near-surface region. This phenomenon is possibly caused by ionization annealing during high-dose-rate implantation.Keywords
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