Nature of the crystallographic defects on the (111) Te surface of CdTe delineated by preferential etching
- 30 September 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 91 (4) , 605-609
- https://doi.org/10.1016/0022-0248(88)90128-5
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Preferential etchant for revealing crystallographic defects on (111) Te surface of CdTe crystalsJournal of Crystal Growth, 1987
- Etch pits and polarity identification in CdTe, HgSe and HgTe crystalsJournal of Crystal Growth, 1986
- Etch pit studies in CdTe crystalsJournal of Vacuum Science & Technology A, 1985
- Liquid phase epitaxial growth of large area Hg1−xCdxTe epitaxial layersJournal of Applied Physics, 1984
- Lpe growth of Hgl−xCdxTe using conventional slider boat and effects of annealing on properties of the epilayersJournal of Electronic Materials, 1984
- Crystallographic polarity and etching of cadmium tellurideJournal of Applied Physics, 1983
- Polarity identification of CdTe crystallitesJournal of Crystal Growth, 1983
- Observation of dislocations in cadmium telluride by cathodoluminescence microscopyApplied Physics Letters, 1979
- Etch Pits and Polarity in CdTe CrystalsJournal of Applied Physics, 1962
- Crystallographic Polarity in the II-VI CompoundsJournal of Applied Physics, 1962