Liquid phase epitaxial growth of large area Hg1−xCdxTe epitaxial layers
- 15 March 1984
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (6) , 1453-1460
- https://doi.org/10.1063/1.333400
Abstract
The liquid phase epitaxial technique in a horizontal boat is used to grow large area epitaxial layers of Hg1−xCdxTe on CdTe substrates with x=1 to x=0.15. Areas as large as 25 cm2 have been grown from Te‐rich melts that have excellent compositional uniformity (Δx=0.001–0.0028) and run‐to‐run reproducibility (Δx=0.003–0.004). Results are presented on surface morphology, compositional grading, and electrical properties. Histograms are presented showing run‐to‐run wavelength reproducibility and uniformity across the epilayers for both 10–15 and 20–25 cm2 areas for selected wavelengths with x≂0.3. Data are presented showing run‐to‐run uniformity of carrier concentration (4.5±0.66×1016 cm−3) and hole mobility (272±15 cm2/Vs) at 77 K for x≂0.3, including their dependence on wavelength.This publication has 13 references indexed in Scilit:
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