Surface migration study of atoms and formation of truly-smooth top and bottom heterointerfaces in GaAsAlAs quantum wells by temperature-switched technique in molecular beam epitaxy
- 31 December 1988
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 4 (2) , 237-241
- https://doi.org/10.1016/0749-6036(88)90042-0
Abstract
No abstract availableKeywords
Funding Information
- Japan Society for the Promotion of Science
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
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- Mass-action control of AlGaAs and GaAs growth in molecular beam epitaxyApplied Physics Letters, 1985
- Layer-by-layer sublimation observed by reflection high-energy electron diffraction intensity oscillation in a molecular beam epitaxy systemApplied Physics Letters, 1985
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Dynamic RHEED observations of the MBE growth of GaAsApplied Physics A, 1984