Fabrication of <5 nm width lines in poly(methylmethacrylate) resist using a water:isopropyl alcohol developer and ultrasonically-assisted development
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- 30 April 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (18) , 2760-2762
- https://doi.org/10.1063/1.1369615
Abstract
We report on the fabrication of 3–4 nm wide continuous lines in a positive tone electron beam resist poly(methylmethacrylate) on a solid substrate. This narrow linewidth was made possible through the use of a nonsolvent-based developer system, water:isopropyl alcohol, together with ultrasonically-assisted development, which reduced the effective development time thus limiting the swelling of the unexposed resist. This combination of solvent system and development technique results in a smaller radius of gyration in the developing polymer molecules and in a wider exposure dose latitude compared to conventional processing and so allows ultrasmall features to be reproduced.Keywords
This publication has 12 references indexed in Scilit:
- Nanolithography using ultrasonically assisted development of calixarene negative electron beam resistJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001
- Characterisation of the ultrasonic development process in UVIII resistMicroelectronic Engineering, 2000
- Comparison of sensitivity and exposure latitude for polymethylmethacrylate, UVIII, and calixarene using conventional dip and ultrasonically assisted developmentJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Electron beam lithography of nanostructures using 2-propanol:water and 2-propanol:methyl isobutyl ketone as developers for poly-methylmethacrylateJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Fabrication of 3 nm wires using 100 keV electron beam lithography and poly(methyl methacrylate) resistApplied Physics Letters, 1996
- Effect of molecular weight on poly(methyl methacrylate) resolutionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron-beam lithography and polymethylmethacrylate resistApplied Physics Letters, 1993
- New high-contrast developers for poly(methyl methacrylate) resistJournal of Applied Physics, 1992
- Enhanced sensitivity in the electron beam resist poly(methyl methacrylate) using improved solvent developerPolymer, 1988
- Nanowriter: A new high-voltage electron beam lithography system for nanometer-scale fabricationJournal of Vacuum Science & Technology B, 1988