Stress Dependence of the E1 and E1 + Δ1 Transitions in InSb and GaSb
- 1 January 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 40 (1) , 227-234
- https://doi.org/10.1002/pssb.19700400123
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Wavelength Modulation Spectrometer for Studying the Optical Properties of SolidsApplied Optics, 1970
- Piezoreflectance of Germanium from 1.9 to 2.8 eVPhysical Review B, 1969
- Stress-Induced Exchange Splitting of Hyperbolic Excitons in GaAs.Physical Review Letters, 1969
- Strain Effects on Optical Critical-Point Structure in Diamond-Type CrystalsPhysical Review B, 1969
- Strain-Split Energy Bands in Semiconductors: GePhysical Review B, 1969
- New Evidence for the Existence of Exciton Effects at Hyperbolic Critical PointsPhysical Review B, 1968
- Effect of Pressure on Interband Reflectivity Spectra of Germanium and Related SemiconductorsPhysical Review B, 1967
- Application of bound‐exciton optical spectra in the study of radiation damage in crystalsPhysica Status Solidi (b), 1966
- Polarization Dependence of the Piezoreflectance in Si and GePhysical Review Letters, 1965
- Das Reflexionsvermögen von Germanium- und Silizium-Einkristallen bei elastischer DeformationPhysica Status Solidi (b), 1965