Internal strain and photoelastic effects in Ga1−xAlxAs/GaAs and In1−xGaxAsyP1−y/InP crystals
- 1 November 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (11) , 6620-6627
- https://doi.org/10.1063/1.331898
Abstract
A method for calculation of photoelastic coefficients in III‐V compounds at energies below the direct band edge is presented. Spectral dependence of the photoelastic‐coefficient data is analyzed on the basis of simplified model of the interband transitions. The theoretical prediction shows a quite good agreement with the experimental data of III‐V binaries. This model is applied to Ga1−xAlxAs ternaries lattice‐matched to GaAs and to In1−xGaxAsyP1−y quaternaries lattice‐matched to InP. A method for analysis of the internal‐strain induced effects in elastically‐deformed heterostructure crystals is also discussed in detail.This publication has 26 references indexed in Scilit:
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