Orientation dependence of breakdown voltage in GaAs
- 30 September 1980
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (9) , 1007-1009
- https://doi.org/10.1016/0038-1101(80)90072-6
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- The band structure dependence of impact ionization by hot carriers in semiconductors: GaAsSolid-State Electronics, 1978
- Unequal electron and hole impact ionization coefficients in GaAsApplied Physics Letters, 1974
- TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORSApplied Physics Letters, 1966
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966