Phonons at non-planar (III-V) semiconductor heterojunctions: I. GaAs/AlAs(001)

Publisher Website
Google Scholar
Abstract
The authors use a two-parameter valence force field model and Green function techniques to study the local vibrational density of states near the GaAs-on-AlAs(001) interface containing steps on an atomic scale. The results demonstrate both the parallel confinement of the optical phonons and the lack of localised optical modes associated with those interface defects. The vibrations of new asymmetric As sites are compared and interpreted on the basis of the atomic local environment.