Deep Luminescence from ‘Relaxed’ Si1−xGex Epitaxial Layers
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Well-resolved band-edge photoluminescence of excitons confined in strained quantum wellsPhysical Review Letters, 1991
- Near-band-gap photoluminescence of Si1−xGex alloys grown on Si(100) by molecular beam epitaxyApplied Physics Letters, 1990
- Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1−x/Si strained layer superlatticesThin Solid Films, 1989
- Relaxation of coherent strain in Si1−xGex/Si superlattices and alloysThin Solid Films, 1989
- Dislocation Related D-Band Luminescence; the Effects of Transition Metal ContaminationMRS Proceedings, 1989
- Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structuresApplied Physics Letters, 1987
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Dislocation-related photoluminescence in siliconApplied Physics A, 1985
- Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)Journal of Applied Physics, 1984
- Dependence of Photoluminescence on Temperature in Dislocated Silicon CrystalsPhysica Status Solidi (a), 1983