Relaxation of coherent strain in Si1−xGex/Si superlattices and alloys
- 1 December 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 183 (1-2) , 79-86
- https://doi.org/10.1016/0040-6090(89)90432-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Strain relaxation kinetics in Si1−xGex/Si heterostructuresJournal of Vacuum Science & Technology B, 1989
- Variation in misfit dislocation behavior as a function of strain in the GeSi/Si systemApplied Physics Letters, 1989
- X-ray diffraction of strain relaxation in Si-Si1−xGex heterostructuresApplied Physics Letters, 1989
- Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures [Appl. Phys. Lett. 4 7, 322 (1985)]Applied Physics Letters, 1986
- Stability of semiconductor strained-layer superlatticesApplied Physics Letters, 1986
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- X-ray rocking curve analysis of superlatticesJournal of Applied Physics, 1984
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984