Novel planar junction termination technique for high voltage power devices
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Multiple-zone single-mask junction termination extension—A high-yield near-ideal breakdown voltage technologyIEEE Transactions on Electron Devices, 1987
- Variation of lateral doping—A new concept to avoid high voltage breakdown of planar junctionsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Highly reliable high-voltage transistors by use of the SIPOS processIEEE Transactions on Electron Devices, 1976
- High-voltage planar p-n junctionsProceedings of the IEEE, 1967