A new relationship between the Fukui coefficient and optimal current value for low-noise operation of field-effect transistors
- 1 September 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (9) , 444-445
- https://doi.org/10.1109/edl.1985.26186
Abstract
In this letter, a new relationship is derived between the Fukui coefficient, appearing in the Fukui's equation, and the optimal current for low-noise operation of field-effect devices. It's validity has been evidenced by considering several experimental cases including MESFET's, HEMT, and TEGFET'S.Keywords
This publication has 2 references indexed in Scilit:
- Optimal noise figure of microwave GaAs MESFET'sIEEE Transactions on Electron Devices, 1979
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975