Preparation of 0.5–103 Ω-cm GaAs by acceptor precipation during heat treatment of oxygen grown crystals
- 31 January 1966
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 4 (1) , 33-36
- https://doi.org/10.1016/0038-1098(66)90100-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964
- Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal GrowthJournal of Applied Physics, 1963
- Preparation and characterization of high resistivity GaAsJournal of Physics and Chemistry of Solids, 1962
- Sources of Contamination in GaAs Crystal GrowthJournal of the Electrochemical Society, 1962
- Energy-Level Model for High-Resistivity Gallium ArsenideNature, 1961