Tunneling of holes from acceptor levels in an applied field
- 1 January 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (1) , 53-58
- https://doi.org/10.1016/0038-1101(84)90092-3
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Optical-transition cross sections involving impurities in semiconductorsPhysical Review B, 1982
- Rate of field ionization fromstates with a quantum defectPhysical Review A, 1981
- Interface recombination phenomena and tunnel effect in Cu2SCdS solar cellsSolar Energy Materials, 1980
- Effect of trap tunneling on the performance of long-wavelength Hg1-xCdxTe photodiodesIEEE Transactions on Electron Devices, 1980
- New Charge-Storage Effect in SiliconDiodes at Cryogenic TemperaturesPhysical Review Letters, 1978
- Theory of the ionization of the hydrogen atom by an external electrostatic fieldPhysical Review A, 1977
- Application of the Quantum-Defect Method to Optical Transitions Involving Deep Effective-Mass-Like Impurities in SemiconductorsPhysical Review B, 1969
- Electronic Spectra of Crystalline Germanium and SiliconPhysical Review B, 1964
- LUMINESCENCE AND CONDUCTIVITY INDUCED BY FIELD IONIZATION OF TRAPSCanadian Journal of Physics, 1959
- Hyperfine Splitting of Donor States in SiliconPhysical Review B, 1955