Atomic Scale Oxidation of Silicon Nanoclusters on Silicon Carbide Surfaces
- 25 September 2003
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry B
- Vol. 107 (42) , 11597-11603
- https://doi.org/10.1021/jp035029e
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Atomic Scale Oxidation of a Complex System:-SiC(0001)-()Physical Review Letters, 2001
- Identification of the Initial-Stage Oxidation Products on Si(111)-(7×7)Physical Review Letters, 1999
- Adsorption of atomic and molecular oxygen and desorption of silicon monoxide on Si(111) surfacesPhysical Review B, 1999
- Low Interface State Density Oxides on P-Type SiCMaterials Science Forum, 1998
- Low-temperature growth of SiC thin films on Si and 6H–SiC by solid-source molecular beam epitaxyApplied Physics Letters, 1995
- Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiCIEEE Transactions on Electron Devices, 1994
- Thermal and photochemical oxidation of Si(111): Doping effect and the reaction mechanismPhysical Review B, 1991
- Successive oxidation stages of adatoms on the Si(111)7×7 surface observed with scanning tunneling microscopy and spectroscopyPhysical Review B, 1990
- Kinetic energy of electrons on a two-dimensional lattice with commensurate fluxPhysical Review B, 1989
- CODATA recommended key values for thermodynamics, 1977 Report of the CODATA Task Group on key values for thermodynamics, 1977The Journal of Chemical Thermodynamics, 1978