Noise measurements in resonant tunnelling structuresas a function of current and temperature

16 March 1995

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 31 (6) , 503-505
https://doi.org/10.1049/el:19950315

Abstract

The authors present the results of noise measurements performed on custom designed resonant tunnelling structures. The shot-noise suppression has been measured as a function of bias current and temperature in the 14 – 223 K range, and results have been compared with those predicted by existing theories.

Keywords

This publication has 4 references indexed in Scilit:

Analytical model of shot noise in double-barrier resonant-tunneling diodes
IEEE Transactions on Electron Devices, 1992
Very sensitive measurement method of electron devices current noise
IEEE Transactions on Instrumentation and Measurement, 1991
Tunneling through AlAs barriers: Γ–X transfer current
Applied Physics Letters, 1989
INTRODUCTION
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