Analytical model of shot noise in double-barrier resonant-tunneling diodes
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (12) , 2686-2693
- https://doi.org/10.1109/16.168748
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- A theory of shot noise in quantum wells and applications in resonant tunneling heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1991
- Noise characteristics of double-barrier resonant-tunneling structures below 10 kHzPhysical Review B, 1990
- Resonant tunneling time delay and quantum well sheet densityJournal of Applied Physics, 1989
- Analytic S-matrix considerations and time delay in resonant tunnelingSuperlattices and Microstructures, 1989
- Electron-electron interactions and resonant tunneling in heterostructuresApplied Physics Letters, 1988
- Space-charge buildup and bistability in resonant-tunneling double-barrier structuresApplied Physics Letters, 1988
- Coherent and sequential tunneling in series barriersIBM Journal of Research and Development, 1988
- AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratioApplied Physics Letters, 1987
- Observation of intrinsic bistability in resonant tunneling structuresPhysical Review Letters, 1987
- Effect of Inelastic Processes on Resonant Tunneling in One DimensionPhysical Review Letters, 1985