Interface states at lattice-matched and pseudomorphic heterostructures
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 60-61, 721-728
- https://doi.org/10.1016/0169-4332(92)90503-p
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Carrier concentration in selectively doped n-AlGaAs/GaAs single heterojunctionsSurface Science, 1990
- A self-consistent computer simulation of compound semiconductor metal-insulator-semiconductor C-V curves based on the disorder-induced gap-state modelJournal of Applied Physics, 1988
- Direct determination of Al content in molecular-beam epitaxially grown AlxGa1−xAs (0≤x≤1) by nuclear resonant reaction analysis and x-ray rocking curve techniquesJournal of Vacuum Science & Technology B, 1988
- Acoustic deformation potentials and heterostructure band offsets in semiconductorsPhysical Review B, 1987
- Band discontinuity for GaAs/AlGaAs heterojunction determined by C-V profiling techniqueJournal of Applied Physics, 1985
- Theory of semiconductor heterojunctions: The role of quantum dipolesPhysical Review B, 1984
- On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface statesThin Solid Films, 1983
- Measurement of isotype heterojunction barriers by C-V profilingApplied Physics Letters, 1980
- Preparation and properties of bulk Gax In1-x As CrystalsJournal of Electronic Materials, 1979
- Large-signal analysis of a silicon Read diode oscillatorIEEE Transactions on Electron Devices, 1969