Carrier concentration in selectively doped n-AlGaAs/GaAs single heterojunctions
- 1 April 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 228 (1-3) , 497-499
- https://doi.org/10.1016/0039-6028(90)90362-c
Abstract
No abstract availableKeywords
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